ELS-F125 Ultra High Precision Electron Beam Lithography system

World's first 125kV lithography system

High throughput with large field writing uniformity as well as fine pattern writing capability such as line width of 5nm or less take advantage of the wealth of experience we have accumulated over the years in developing lithography system.

Best Pattern Writing Capability

-Line width of 5nm or less is guaranteed at 125kV

-1.7nm beam diameter&minimum proximity effect at 125kV

4 nm line in 35nm pitch

15nm Rings

5nm Lines in fine pitch

High Throughput and Uniformity

-Superior large field writing:

 Uniform 10nm lines in entire 500um field

-Small beam diameter at high beam current:

 2nm beam diameter at 1nA

User friendly Interface

[CAD snd SEM interfaces on Windows]

-Easy pattern design function

-Easy control of beam condition

CAD Interface

SEM Interface (GUI)

50nm Triangles

50nm Square

SAW filter pattern (2 µm thickness)

Emitter

 ZrO/W  thermal field emitter

Acceleration Voltage

 125 kV, 75 kV, 25 kV

Minimum Beam Diameter

 Φ1.7 nm (@125 kV)

Minimum Line Width

 5 nm or less (@125 kV)

Beam Current

 5 pA to 100 nA

Field Size

 Max. 3,000 µm ｘ 3,000 µm Min. 100 µm ｘ 100 µm

Beam Positioning

  Max. 1,000,000 ｘ 1,000,000 (20bit DAC) 

Beam Positioning Resolution

  Min. 0.1 nm 

Maximum Specimen Size

  8" wafer or 8" square mask